Paper
18 May 1989 Quantum Confined Stark Effect In Asymmetric Double Quantum Wells
Yehiam Prior, J. E. Golub, P. F. Liao, D. J. Eilenberger, J. P. Harbison, L. T. Florez
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Proceedings Volume 1033, Trends in Quantum Electronics; (1989) https://doi.org/10.1117/12.950623
Event: International Conference on Trends in Quantum Electronics, 1988, Bucharest, Romania
Abstract
The effects of an external electric field on the luminescence and absorbtion properties of asymmetric coupled quantum wells (ACQW) structures consisting of two quantum wells of different width and depth are investigated. Experimental results are presented for two GaAs/AlGaAs coupled well systems, demonstrating the large shift and the sharp turnoff of the wavefunction overlap. We have observed the transition from type I (spatially direct) to type II (spatially indirect) in GaAs/AlGaAs ACQW. The transition is manifested as a strong electric field-induced quenching of the photoluminescence which correlates well with the results of a single particle calculation of the electron-hole overlap. By properly designing the coupled well structure, photoluminescence quenching (90% - 10%) is observed for a change in bias field of only 5 kV/cm. Owing to the large level repulsion, a Stark shift of 5 meV is observed when the bias field is switched by only 18 kV/cm.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yehiam Prior, J. E. Golub, P. F. Liao, D. J. Eilenberger, J. P. Harbison, and L. T. Florez "Quantum Confined Stark Effect In Asymmetric Double Quantum Wells", Proc. SPIE 1033, Trends in Quantum Electronics, (18 May 1989); https://doi.org/10.1117/12.950623
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Cited by 2 scholarly publications.
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KEYWORDS
Quantum wells

Luminescence

Absorption

Oscillators

Quantum electronics

Switching

Gallium arsenide

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