Advances In Plasma Enhanced Thin Film Deposition

Evert P. van de Ven

doi:10.1117/12.951022

15 March 1989 Advances In Plasma Enhanced Thin Film Deposition

Evert P. van de Ven

Proceedings Volume 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors; (1989) https://doi.org/10.1117/12.951022
Event: SPIE Advanced Processing Technologies for Optical and Electronic Devices (colocated wth OPTCON), 1988, Santa Clara, CA, United States

Abstract

Plasma enhanced chemical vapor deposition has been used in the semiconductor industry for device passivation and interlayer dielectric applications. The primary function of the glow discharge has been to decompose the reactants to allow lower deposition temperatures. However, in addition to reducing the deposition temperature, RF plasmas can be used to control film stress, improve step coverage and conformality, and obtain exceptional uniformity and process control. Moreover, process induced defects (hillocks, particulates and pinholes) can be greatly reduced by using high rate localized deposition and in situ reactor cleaning. Examples discussed include the deposition of doped and undoped Si0₂/ SiN and TEOS oxides.

Citation Download Citation

Evert P. van de Ven "Advances In Plasma Enhanced Thin Film Deposition", Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989); https://doi.org/10.1117/12.951022

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