Aerial image metrology for OPC modeling and mask qualification

Ao Chen; Yee Mei Foong; Thomas Thaler; Ute Buttgereit; Angeline Chung; Andrew Burbine; John Sturtevant; Chris Clifford; Kostas Adam; Peter De Bisschop

doi:10.1117/12.2281886

28 September 2017 Aerial image metrology for OPC modeling and mask qualification

Ao Chen, Yee Mei Foong, Thomas Thaler, Ute Buttgereit, Angeline Chung, Andrew Burbine, John Sturtevant, Chris Clifford, Kostas Adam, Peter De Bisschop

Author Affiliations +

Proceedings Volume 10446, 33rd European Mask and Lithography Conference; 104460V (2017) https://doi.org/10.1117/12.2281886
Event: 33rd European Mask and Lithography Conference, 2017, Dresden, Germany

Abstract

As nodes become smaller and smaller, the OPC applied to enable these nodes becomes more and more sophisticated. This trend peaks today in curve-linear OPC approaches that are currently starting to appear on the roadmap. With this sophistication of OPC, the mask pattern complexity increases. CD-SEM based mask qualification strategies as they are used today are starting to struggle to provide a precise forecast of the printing behavior of a mask on wafer. An aerial image CD measurement performed on ZEISS Wafer-Level CD system (WLCD) is a complementary approach to mask CD-SEMs to judge the lithographical performance of the mask and its critical production features. The advantage of the aerial image is that it includes all optical effects of the mask such as OPC, SRAF, 3D mask effects, once the image is taken under scanner equivalent illumination conditions. Additionally, it reduces the feature complexity and analyzes the printing relevant CD.

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Ao Chen, Yee Mei Foong, Thomas Thaler, Ute Buttgereit, Angeline Chung, Andrew Burbine, John Sturtevant, Chris Clifford, Kostas Adam, and Peter De Bisschop "Aerial image metrology for OPC modeling and mask qualification", Proc. SPIE 10446, 33rd European Mask and Lithography Conference, 104460V (28 September 2017); https://doi.org/10.1117/12.2281886

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