New laser slicing technology named KABRA process enables high speed and high efficiency SiC slicing

Kazuya Hirata

doi:10.1117/12.2291458

19 February 2018 New laser slicing technology named KABRA process enables high speed and high efficiency SiC slicing

Kazuya Hirata

Proceedings Volume 10520, Laser-based Micro- and Nanoprocessing XII; 1052003 (2018) https://doi.org/10.1117/12.2291458
Event: SPIE LASE, 2018, San Francisco, California, United States

Abstract

SiC is highly anticipated as the material to be used in the next generation of power devices. However, due to its high rigidity, it is difficult to process, has a low throughput in the wafer production process, and has a high cost. In order to solve these issues, we have developed the KABRA process – a new wafer-production process which uses laser processing technology – and have devised fully-automatic equipment called “KABRA!zen,” which enables the mass production of SiC wafers. KABRA!zen achieves approximately twice the throughput and one-third the material loss of the conventional processes.

Citation Download Citation

Kazuya Hirata "New laser slicing technology named KABRA process enables high speed and high efficiency SiC slicing", Proc. SPIE 10520, Laser-based Micro- and Nanoprocessing XII, 1052003 (19 February 2018); https://doi.org/10.1117/12.2291458

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