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19 March 2018 EUV photolithography: resist progress and challenges
Christopher K. Ober, Hong Xu, Vasiliki Kosma, Kazunori Sakai, Emmanuel P. Giannelis
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Proceedings Volume 10583, Extreme Ultraviolet (EUV) Lithography IX; 1058306 (2018) https://doi.org/10.1117/12.2302759
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States
Abstract
With the rapid development of semiconductors, today's optical lithography is approaching its physical limits, and thus alternative patterning technology is urgently desired. Extreme ultra-violet (EUV) lithography, using a wavelength of 13.5 nm, is considered one of the most prominent candidates for next generation lithography. The main challenge for EUV resists is to simultaneously satisfy resolution, LWR (line-width roughness) and sensitivity requirements following the ITRS roadmap. Though polymer-based CAR (chemically amplified resist) is the current standard photoresist, entirely new resist platforms are required due to the performance targets of smaller process nodes. In this paper, our recent progress in metal oxide nanoparticle photoresist research will be discussed. Brief discussion of a number of important structure and property issues pertaining to key characteristics affecting resist performance is also included.
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Christopher K. Ober, Hong Xu, Vasiliki Kosma, Kazunori Sakai, and Emmanuel P. Giannelis "EUV photolithography: resist progress and challenges", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 1058306 (19 March 2018); https://doi.org/10.1117/12.2302759
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Cited by 5 scholarly publications and 1 patent.
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KEYWORDS
Nanoparticles
Photoresist materials
Oxides
Extreme ultraviolet lithography
Extreme ultraviolet
Lithography
Etching
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