Dependence of optical absorption spectra of the flat double nanoheterostructures Al1-xGaxN/GaN/Al1-xGaxN from their thickness and concentration

Oleksandr V. Derevyanchuk; Denys V. Kondryuk; Valeriy M. Kramar

doi:10.1117/12.2305437

18 January 2018 Dependence of optical absorption spectra of the flat double nanoheterostructures Al_xGa_1-xN/GaN/Al_xGa_1-xN from their thickness and concentration

Oleksandr V. Derevyanchuk, Denys V. Kondryuk, Valeriy M. Kramar

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Proceedings Volume 10612, Thirteenth International Conference on Correlation Optics; 1061219 (2018) https://doi.org/10.1117/12.2305437
Event: Thirteenth International Conference on Correlation Optics, 2017, Chernivtsi, Ukraine

Abstract

The energy of ground state of electron, hole and exiton in quasi-two-dimensional semiconductor nanoheterostructure with quantum well (nanofilm) are calculated by using the dielectric continuum model, approximation of effective masses and Green’s function method. Dependence of these energies on nanofilms thickness and barrier material composition have been studied taken into account effects of quantum confinement, self-polarization of the heterojunction planes and interaction with warious branches of optical phonons in such nanohetrostructures. Specific calculation was made for nanofilm GaN embedded in barrier material Al_xGa_1-xN, both of him have wurtzite-type structure. It has been studied on this base the influence of changes of nanofilm thickness and barrier material composition on the spectral location the electron absorption edge and exciton peaks in such nanoheterostructures. The results of this study may be of practical interest, since excitons provide a sensitive indicator of material quality.

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Oleksandr V. Derevyanchuk, Denys V. Kondryuk, and Valeriy M. Kramar "Dependence of optical absorption spectra of the flat double nanoheterostructures Al_xGa_1-xN/GaN/Al_xGa_1-xN from their thickness and concentration", Proc. SPIE 10612, Thirteenth International Conference on Correlation Optics, 1061219 (18 January 2018); https://doi.org/10.1117/12.2305437

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KEYWORDS

Quantum wells

Absorption

Excitons

Gallium nitride

Gallium

Phonons

Aluminum

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