Integrated SiN on SOI dual photonic devices for advanced datacom solutions

Sylvain Guerber; Carlos Alonso-Ramos; Daniel Benedikovic; Diego Pérez-Galacho; Xavier Le Roux; Nathalie Vulliet; Sébastien Crémer; Laurène Babaud; Jonathan Planchot; Daniel Benoit; Paul Chantraine; François Leverd; Delia Ristoiu; Philippe Grosse; Delphine Marris-Morini; Laurent Vivien; Charles Baudot; Frédéric Boeuf

doi:10.1117/12.2306160

22 May 2018 Integrated SiN on SOI dual photonic devices for advanced datacom solutions

Sylvain Guerber, Carlos Alonso-Ramos, Daniel Benedikovic, Diego Pérez-Galacho, Xavier Le Roux, Nathalie Vulliet, Sébastien Crémer, Laurène Babaud, Jonathan Planchot, Daniel Benoit, Paul Chantraine, François Leverd, Delia Ristoiu, Philippe Grosse, Delphine Marris-Morini, Laurent Vivien, Charles Baudot, Frédéric Boeuf

Author Affiliations +

Proceedings Volume 10686, Silicon Photonics: From Fundamental Research to Manufacturing; 106860W (2018) https://doi.org/10.1117/12.2306160
Event: SPIE Photonics Europe, 2018, Strasbourg, France

Abstract

We report on the co-integration of an additional passive layer within a Silicon Photonic chip for advanced passive devices. Being a CMOS compatible material, Silicon Nitride (SiN) appears as an attractive candidate. With a moderate refractive index contrast compared to SOI, SiN based devices would be intrinsically much more tolerant to fabrication errors while keeping a reasonable footprint. In addition, it's seven times lower thermo-optical coefficient, relatively to Silicon, could lead to thermal-tuning free components. The co-integration of SiN on SOI has been explored in ST 300mm R and D photonic platform DAPHNE and is presented in this paper. Surface roughness of the SiN films have been characterized through Atomic Force Microscopy (AFM) showing an RMS roughness below 2nm. The film thickness uniformity have been evaluated by ellipsometry revealing a three-sigma of 21nm. Statistical measurements have been performed on basic key building blocks such as SiN strip waveguide showing propagation loss below 0.7dB/cm and 40μm radius bends with losses below 0.02dB/90°. A compact Si-SiN transition taper was developed and statistically measured showing insertion losses below 0.17dB/transition on the whole O-band wavelength range. Moreover, advanced WDM devices such as wavelength-stabilized directional couplers (WSDC) have been developed.

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Sylvain Guerber, Carlos Alonso-Ramos, Daniel Benedikovic, Diego Pérez-Galacho, Xavier Le Roux, Nathalie Vulliet, Sébastien Crémer, Laurène Babaud, Jonathan Planchot, Daniel Benoit, Paul Chantraine, François Leverd, Delia Ristoiu, Philippe Grosse, Delphine Marris-Morini, Laurent Vivien, Charles Baudot, and Frédéric Boeuf "Integrated SiN on SOI dual photonic devices for advanced datacom solutions ", Proc. SPIE 10686, Silicon Photonics: From Fundamental Research to Manufacturing, 106860W (22 May 2018); https://doi.org/10.1117/12.2306160

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