Reduce the efficiency droop by p-doped quantum well barriers in InGaN multiple quantum well

Xioadong Yang; Shichen Su; Xiaoxia Wen; Ting Mei; Jin Guo

doi:10.1117/12.2307292

20 February 2018 Reduce the efficiency droop by p-doped quantum well barriers in InGaN multiple quantum well

Xioadong Yang, Shichen Su, Xiaoxia Wen, Ting Mei, Jin Guo

Proceedings Volume 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application; 106974C (2018) https://doi.org/10.1117/12.2307292
Event: Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 2017, Nanjing, China

Abstract

InGaN LEDs with different doped type and doping concentration of quantum well barriers are theoretically studied and compared by using the APSYS simulation program. Comparing with the undoped and the n-doped, the good efficiency profile is obtained when the quantum well barrier is p-doped. As the concentration of p-doped increases, the hole concentration in quantum well increases markedly. The optical performance; radiative recombination rate are improved and electron leakage is reduced.

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Xioadong Yang, Shichen Su, Xiaoxia Wen, Ting Mei, and Jin Guo "Reduce the efficiency droop by p-doped quantum well barriers in InGaN multiple quantum well", Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106974C (20 February 2018); https://doi.org/10.1117/12.2307292

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KEYWORDS

Quantum wells

Light emitting diodes

Quantum efficiency

Indium gallium nitride

Doping

Electron beam lithography

Gallium nitride

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