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12 October 2018 Long collector mirror lifetime demonstration around 100W average LP-EUV source for semiconductor high volume manufacturing (Conference Presentation)
Hakaru Mizoguchi, Hiroaki Nakarai, Tamotsu Abe, Yasufumi Kawasuji, Hiroshi Tanaka, Yukio Watanabe, Tsukasa Hori, Takeshi Kodema, Yutaka Shiraishi, Tatsuya Yanagida, George Soumangne, Tsuyoshi Yamada, Taku Yamazaki, Takashi Saitou
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Proceedings Volume 10809, International Conference on Extreme Ultraviolet Lithography 2018; 1080906 (2018) https://doi.org/10.1117/12.2502015
Event: SPIE Photomask Technology + Extreme Ultraviolet Lithography, 2018, Monterey, California, United States
Abstract
We have been developing CO2-Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL. Unique and original technologies such as; combination of pulsed CO2 laser and Sn droplets, dual wavelength laser pulses shooting and mitigation with magnetic field have been developed in Gigaphoton Inc.. We have developed first practical source for HVM; “GL200E” 1) in 2014. We have proved high average power CO2 laser more than 20kW at output power cooperate with Mitsubishi electric cooperation2). Pilot#1 is up running and its demonstrates HVM capability; EUV power recorded at111W average (117W in burst stabilized, 95% duty) with 5% conversion efficiency for 22hours operation in October 20163). Availability is potentially achievable at 89% (2weeks average), also superior magnetic mitigation has demonstrated promising mirror degradation rate (= 0.4%/Gp) above 100W level operation in burst (30W in average) with dummy mirror test.4). Recently we have demonstrated actual collector mirror reflectivity degradation rate is less than -0.4%/Gp by using real collector mirror around 100W ( at I/F clean ) in average power during one week operation. We will report latest data at symposium Reference 1) Hakaru Mizoguchi, et. al.: “Sub-hundred Watt operation demonstration of HVM LPP-EUV source”, Proc. SPIE 9048, (2014) 2) Yoichi Tanino et.al.:” A Driver CO2 Laser Using Transverse-flow CO2 Laser Amplifiers”, EUV Symposium 2013, ( Oct.6-10.2013, Toyama) 3) Hakaru Mizoguchi et al.:” Performance of 250W High Power HVM LPP-EUV Source”, Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII (2017) 4) Hakaru Mizoguchi, et al: ” High Power HVM LPP-EUV Source with Long Collector Mirror Lifetime”, SPIE Advanced Lithography ( 2018)
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Hakaru Mizoguchi, Hiroaki Nakarai, Tamotsu Abe, Yasufumi Kawasuji, Hiroshi Tanaka, Yukio Watanabe, Tsukasa Hori, Takeshi Kodema, Yutaka Shiraishi, Tatsuya Yanagida, George Soumangne, Tsuyoshi Yamada, Taku Yamazaki, and Takashi Saitou "Long collector mirror lifetime demonstration around 100W average LP-EUV source for semiconductor high volume manufacturing (Conference Presentation)", Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 1080906 (12 October 2018); https://doi.org/10.1117/12.2502015
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KEYWORDS
Mirrors
Carbon dioxide lasers
Extreme ultraviolet
High volume manufacturing
Semiconductor manufacturing
Semiconductors
Extreme ultraviolet lithography
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