Paper
5 November 2018 Sidelobe suppression of laser diode arrays by on-chip phase and amplitude manipulation
Xuyan Zhou, Hongwei Qu, Aiyi Qi, Zhonghao Chen, Xiaoxu Xing, Xueyou Wang, Yufei Wang, Wanhua Zheng
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Abstract
The semiconductor laser diode has the advantage of low cost, high efficiency, and compactness, but the beam divergence is too large to directly use. The phase-locked laser array is an efficient way to control the lateral lasing mode, which can help to achieve narrow farfield.. Though the lasing mode of phase-locked laser array can be an in-phase mode via Ywaveguide, integrated with phase shifter and external cavity, it still has a large side lobe in the farfiled. We demonstrated an on-chip phase and amplitude manipulation method to suppress the side-lobe in the farfield. The intensity of the sidelobes decrease from 0.307 to 0.109 and the integral energy of the main lobe increase from 52.5% to 60.5%
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Xuyan Zhou, Hongwei Qu, Aiyi Qi, Zhonghao Chen, Xiaoxu Xing, Xueyou Wang, Yufei Wang, and Wanhua Zheng "Sidelobe suppression of laser diode arrays by on-chip phase and amplitude manipulation", Proc. SPIE 10811, High-Power Lasers and Applications IX, 108110J (5 November 2018); https://doi.org/10.1117/12.2500531
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KEYWORDS
Phase shifts

Waveguides

Semiconductor lasers

Beam propagation method

Light scattering

Waveguide modes

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