4 March 2019Fabrication of a quasi-phase-matching stack of 53 GaAs plates for high-power mid-infrared wavelength conversion by use of room-temperature bonding
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Using the room-temperature-bonding technique, we have succeeded in fabricating a quasi-phase-matching (QPM) stack of 53 GaAs plates with each thickness of 106 μm and aperture of 5.5 × 5.0 mm for second-harmonic generation of a CO2 laser at 10.6 μm. An improved process was applied which realized fine alignment of the GaAs plates on the translation stage. The fabricated 5.6 mm long, 53 plate-stacked GaAs-QPM device generated 20 times higher secondharmonic power than the previously fabricated 0.95 mm long QPM stack of nine GaAs plates.
Hiroki Takase,Hiroki Atarashi,Tsubasa Kaga, andIchiro Shoji
"Fabrication of a quasi-phase-matching stack of 53 GaAs plates for high-power mid-infrared wavelength conversion by use of room-temperature bonding", Proc. SPIE 10902, Nonlinear Frequency Generation and Conversion: Materials and Devices XVIII, 109020I (4 March 2019); https://doi.org/10.1117/12.2508194
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Hiroki Takase, Hiroki Atarashi, Tsubasa Kaga, Ichiro Shoji, "Fabrication of a quasi-phase-matching stack of 53 GaAs plates for high-power mid-infrared wavelength conversion by use of room-temperature bonding," Proc. SPIE 10902, Nonlinear Frequency Generation and Conversion: Materials and Devices XVIII, 109020I (4 March 2019); https://doi.org/10.1117/12.2508194