Halide vapor phase epitaxy of a- and b-Ga2O3 films (Conference Presentation)

Jacob H. Leach

doi:10.1117/12.2527567

8 March 2019 Halide vapor phase epitaxy of α- and β-Ga₂O₃ films (Conference Presentation)

Jacob H. Leach

Author Affiliations +

Proceedings Volume 10919, Oxide-based Materials and Devices X; 109190S (2019) https://doi.org/10.1117/12.2527567
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

Thanks to their superior breakdown fields, both beta- and alpha-phase Ga2O3 are poised to achieve ultra-high-performance devices enabling highly efficient, high voltage power switching systems. To realize the thick films required of the highest voltage devices, a growth technique which can achieve high growth rates is desired. Kyma Technologies has developed a low-cost halide vapor phase epitaxy (HVPE) tool for the growth of both beta- phase and alpha- phase Ga2O3 films which boasts high growth rates and smoothness while simultaneously being able to be lightly and controllably doped with Si and free of carbon. We will outline our recent growth results including effects of substrate preparation and growth conditions on epilayer morphology and mobility.

Conference Presentation

Citation Download Citation

Jacob H. Leach "Halide vapor phase epitaxy of α- and β-Ga₂O₃ films (Conference Presentation)", Proc. SPIE 10919, Oxide-based Materials and Devices X, 109190S (8 March 2019); https://doi.org/10.1117/12.2527567

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