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Alternative lithography approaches, especially pattering technologies are in advance since several years. Every day new, more or less high localized, AFM-tip based structuring methods as well as new optical and e-beam methods become acquainted. Most of them are sequential single-point procedures. The local interaction reaches from 150 nm up to sub-10 nm. Especially tip based methods are developed on the basis of atomic force microscopes AFM. Therefore, the ranges, which can be structured, are only in the range of 2 µm x 2 µm up to 100 µm x 100 µm. In most cases it is not known or not verified if those new tip based techniques are suitable for larger ranges and areas. Even the stages and control algorithms of AFM’s are not optimized for defined, high dynamic and as well high stable scanning trajectories in the nanometre respectively in the sub-nanometre level. Here, Prof. Tseng from Arizona State University noted “the quality…of the nanostructures created by TipBased Nanofabrication depend greatly on the capacities of equipment and instruments used and the extent to which the tip can be precisely controlled. It is unavoidable that the TBN system be automated and that precision of control be in the subnanometers for dimension accuracy, and sub-nanonewtons for force accuracy.” [1] A first way out to increase the precision could be the application of so-called metrological AFM, especially developed at national metrological institutes. But the deficit of a small scanning range still remains. Nanopositioning and nanomeasuring machines where developed at the Technische Universität Ilmenau, Institute of Process Measurement and Sensor technology, first for positioning and measuring three-dimensional objects in a range of 25 mm x 25 mm x 5 mm with 20 pm resolution and nanometer precision [12]. They can equipped with most versatile probing systems like AFM, laser focus probes and 3D-micro probes to fulfill extraordinary metrological challenges. This unique precision is allowed by the application of an extended three-dimensional Abbe-comparator principle combined with high precision laser interferometer controlled stage in six degrees of freedom. A substantial progress in nano patterning can be achieved by combining this outstanding technology with advanced scanning proximal probe lithography on the base of Fowler-Nordheim-electron-field emission [30]. In this NPMmachine the high precision large area pattern generation can be combined with an advanced high speed nanometrology simultaneously. This paper addresses different aspects that are related to the metrological challenges in increasing measuring volumes up to 200 mm x 200 mm x 25 mm, high dynamic nanopositioning and control on complex trajectories, as well as implementation of nanofabrication tools into the NPMM-machine.
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