Study of outgassing from the ArF CA chemically amplified resist ArF (193 nm) exposure

Hiroko Minami; Yoko Matsumoto; Atsushi Sekiguchi; Tomoki Nishino

doi:10.1117/12.2513398

25 March 2019 Study of outgassing from the ArF CA chemically amplified resist ArF (193 nm) exposure

Hiroko Minami, Yoko Matsumoto, Atsushi Sekiguchi, Tomoki Nishino

Proceedings Volume 10960, Advances in Patterning Materials and Processes XXXVI; 1096021 (2019) https://doi.org/10.1117/12.2513398
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States

Abstract

In recent years, we have seen growing numbers of reports on problems associated with outgas generated from resists during ArF exposure, including contaminating of the exposure equipment lens. Scanner manufacturers have apparently begun taking countermeasures—for example, establishing criteria for outgas generated by resists during exposure. In the near future, resist manufacturers will likely be required to attach documents regarding outgassing to their products at the time of shipment. In our earlier studies, we tried to establish methods for evaluating outgassing from KrF resists during KrF (248 nm) exposure. This paper examines an approach to evaluating outgassing from ArF chemically-amplified resists during ArF exposure, with a special focus on sulfate ions (SO₄^2-) derived from PAG, based on the outgas analytical techniques that we have built up to date. We used ion chromatography (IC) as the method of analysis.

Citation Download Citation

Hiroko Minami, Yoko Matsumoto, Atsushi Sekiguchi, and Tomoki Nishino "Study of outgassing from the ArF CA chemically amplified resist ArF (193 nm) exposure", Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 1096021 (25 March 2019); https://doi.org/10.1117/12.2513398

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