The effect of growth rate variation on structural and optical properties of self assembled InAs quantum dots

Rishabh A. Dahale; Abhijeet Aanand; Sanowar A. Gazi; Suryansh Dongre; Sritoma Paul; Shubham Mondal; Anubhav Agarwal; Debabrata Das; Debiprasad Panda; Subhananda Chakrabarti

doi:10.1117/12.2529006

9 September 2019 The effect of growth rate variation on structural and optical properties of self assembled InAs quantum dots

Rishabh A. Dahale, Abhijeet Aanand, Sanowar A. Gazi, Suryansh Dongre, Sritoma Paul, Shubham Mondal, Anubhav Agarwal, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Author Affiliations +

Proceedings Volume 11085, Low-Dimensional Materials and Devices 2019; 1108519 (2019) https://doi.org/10.1117/12.2529006
Event: SPIE Nanoscience + Engineering, 2019, San Diego, California, United States

Abstract

In spite of numerous advantages offered by Quantum Dot (QD) based imaging systems in infrared photo-detection, the physical realization of such systems has always been a challenging task. In this study, we aim to analyze the effects of growth rate variation on the structural and optical properties of self-assembled InAs/GaAs Stranski-Krastanov (SK) QDs grown on semi-insulating GaAs substrate using MBE (Molecular Beam Epitaxy). Five samples grown at a substrate temperature of 490°C with varying growth rates (0.025ML/s, 0.05ML/s, 0.075ML/s, 0.1ML/s, 0.15ML/s) were investigated using PL spectroscopy, and AFM measurements. PL spectroscopy showed a blue shift in the ground state peak wavelength with an increase in growth rate which was further corroborated by AFM measurements, showing reduced dot-size with an increased growth rate. AFM measurements showed an increase in dot density with an increased growth rate suggesting increased tendency towards nucleation. Integrated PL intensity witnessed an initial increase with an increased growth rate before achieving its maxima for sample grown at 0.075ML/s, rendering the sample grown at 0.075ML/s best in terms of optical activity. These observations provided key insights into the growth kinetics operating during dot-formation through SK growth mode by evaluating the competition between the forces due to surface diffusion and nucleation.

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Rishabh A. Dahale, Abhijeet Aanand, Sanowar A. Gazi, Suryansh Dongre, Sritoma Paul, Shubham Mondal, Anubhav Agarwal, Debabrata Das, Debiprasad Panda, and Subhananda Chakrabarti "The effect of growth rate variation on structural and optical properties of self assembled InAs quantum dots", Proc. SPIE 11085, Low-Dimensional Materials and Devices 2019, 1108519 (9 September 2019); https://doi.org/10.1117/12.2529006

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KEYWORDS

Atomic force microscopy

Indium arsenide

Optical properties

Quantum dots

Gallium arsenide

Heterojunctions

Molecular beam epitaxy

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