High performance and CMOS compatible photonic switches based on phase change materials

Rajesh Kumar; Nadir Ali; Shubham Singh

doi:10.1117/12.2538866

19 November 2019 High performance and CMOS compatible photonic switches based on phase change materials

Rajesh Kumar, Nadir Ali, Shubham Singh

Proceedings Volume 11184, Optoelectronic Devices and Integration VIII; 111840C (2019) https://doi.org/10.1117/12.2538866
Event: SPIE/COS Photonics Asia, 2019, Hangzhou, China

Abstract

Photonic switches based on phase change materials that are nonvolatile in nature and consume lesser power during switching process while having ultra-low footprint are emerging fast to address the challenges faced by modern interconnects. In addition to optical interconnects and optical communication at 1.55 μm wavelength, such devices are likely to be in great demand for emerging optical communication window around 2 μm wavelength. The switching in phase change materials can be triggered by electrical, optical or thermal means. One such material Ge₂Sb₂Te₅ is technologically mature, cost effective and compatible with CMOS fabrication technology. It can exist in amorphous as well as crystalline phase and remains stable in both the phases. It can be switched rapidly and repeatedly for realizing photonic switching devices around wavelengths 1.55 μm and 2.0 μm. By integrating Ge₂Sb₂Te₅ on silicon-on-insulator platform, the switching functionalities with high performance can be achieved. Here, we present various types of switches based on different hybrid Ge₂Sb₂Te₅-Silicon waveguide. Different geometries will be discussed for operational wavelengths of 1.55 μm and 2.0 μm. Different design strategies that lead to realization of high performance photonic switches in terms of extinction ratio, insertion loss, switching energy and re-configurability using ultra-compact Ge₂Sb₂Te₅ embedded within the silicon waveguide and having indium tin oxide electrodes are described in detail.

Citation Download Citation

Rajesh Kumar, Nadir Ali, and Shubham Singh "High performance and CMOS compatible photonic switches based on phase change materials", Proc. SPIE 11184, Optoelectronic Devices and Integration VIII, 111840C (19 November 2019); https://doi.org/10.1117/12.2538866

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
10 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Switches

Switching

Silicon

CMOS technology

Optical communications

Waveguides

Crystals

Show All Keywords

Keywords/Phrases

Search In:

Publication Years