PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
BAlN films were performed by either the flow-modulated epitaxy method or continuous growth method. All BxAl1-xN films are single-phase confirmed by high-resolution 2θ–ω (002) X-ray diffraction. The Boron (B) content of each sample was determined by Secondary Neutral Mass Spectrometry with various values have been achieved from 22 to 34% and reconfirmed by Rutherford backscattering spectrometry. All BAlN samples clearly showed the columnar crystalline on the surface which was observed by AFM measurement. The high B contents can expand the applications of BAlN for deep ultraviolet and power electronic device applications.
Tinh Binh Tran,Feras AlQatari, andXiaohang Li
"Characterizations of BAIN films with various boron contents (Conference Presentation)", Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800F (10 March 2020); https://doi.org/10.1117/12.2545798
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Tinh Binh Tran, Feras AlQatari, Xiaohang Li, "Characterizations of BAIN films with various boron contents (Conference Presentation)," Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800F (10 March 2020); https://doi.org/10.1117/12.2545798