Multi-chip heterogeneously integrated array of active three-terminal transistor lasers and passive photonic structures for electronic-photonic integration on silicon

John A. Carlson; John M. Dallesasse

doi:10.1117/12.2544009

26 February 2020 Multi-chip heterogeneously integrated array of active three-terminal transistor lasers and passive photonic structures for electronic-photonic integration on silicon

John A. Carlson, John M. Dallesasse

Author Affiliations +

Proceedings Volume 11285, Silicon Photonics XV; 1128506 (2020) https://doi.org/10.1117/12.2544009
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

An array of active photonic devices is fabricated in unison after a heterogeneous integration process first metal-eutectically bonds these distinct materials as a distribution onto a silicon host wafer. The patterning out of heterogeneous materials followed by the formation of all photonic devices allows for wide-area fine-alignment without the need for discrete die alignment or placement. The integration process is designed as a CMOS-compatible, scalable method for bringing together distinct III-V epitaxial structures and optical-waveguiding epitaxial structures, demonstrating the capabilities of forming a multi-chip layer of photonic materials. Integrated GaAs-based vertical light-emitting transistors (LET) are designed and fabricated as the active devices whose third electrical terminal provides an electrical interconnect and thermal dissipation path to the silicon host wafer. The performance of these devices as both electrical transistors and spontaneous-emission optical devices is compared to their monolithically-integrated counterparts to investigate improvements in device characteristics when integrated onto silicon. The fabrication methods are modified and optimized for thin-film transferred materials and are then extended to transistor laser (TL) fabrication. Passive waveguiding structures are designed and simulated for coupling light from the active devices, and their fabrication scheme is presented such that it can be similarly performed with transferred materials. Work toward the demonstration of integrated transistor lasers is shown to represent progress toward an electronic-photonic circuit network. The combination of heterogeneous integration with three-terminal photonic structures enables an elegant solution to both packaging and signal interconnect constraints for the implementation of photonic logic in silicon photonics systems.

Conference Presentation

Citation Download Citation

John A. Carlson and John M. Dallesasse "Multi-chip heterogeneously integrated array of active three-terminal transistor lasers and passive photonic structures for electronic-photonic integration on silicon", Proc. SPIE 11285, Silicon Photonics XV, 1128506 (26 February 2020); https://doi.org/10.1117/12.2544009

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available