Development of high reflective phase shift type absorber for future generation EUV mask blank (Conference Presentation)

Yohei Ikebe; Osamu Nozawa; Takahiro Onoue

doi:10.1117/12.2550941

24 March 2020 Development of high reflective phase shift type absorber for future generation EUV mask blank (Conference Presentation)

Yohei Ikebe, Osamu Nozawa, Takahiro Onoue

Author Affiliations +

Proceedings Volume 11323, Extreme Ultraviolet (EUV) Lithography XI; 1132311 (2020) https://doi.org/10.1117/12.2550941
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

Toward logic 3nm node and beyond, alternative absorber material is required to reduce mask 3D effect. One of the promising candidates is attenuated phase shirt type absorber which is effective for specific pattern shape such as contact hole. We developed novel high reflective phase shift type absorber. In this paper, we will report the blank and mask properties for this high reflective phase shift type absorber material.

Conference Presentation

Citation Download Citation

Yohei Ikebe, Osamu Nozawa, and Takahiro Onoue "Development of high reflective phase shift type absorber for future generation EUV mask blank (Conference Presentation)", Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 1132311 (24 March 2020); https://doi.org/10.1117/12.2550941

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