Noise and linewidth characterizations of DBR laser based on surface etched high-order Bragg gratings

Chao Chen; Peng Jia; Li Qin; Yong-Yi Chen; Hong Chen; Yong-Qiang Ning; Li-Jun Wang

doi:10.1117/12.2548066

18 December 2019 Noise and linewidth characterizations of DBR laser based on surface etched high-order Bragg gratings

Chao Chen, Peng Jia, Li Qin, Yong-Yi Chen, Hong Chen, Yong-Qiang Ning, Li-Jun Wang

Proceedings Volume 11334, AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications; 113341C (2019) https://doi.org/10.1117/12.2548066
Event: Applied Optics and Photonics China (AOPC2019), 2019, Beijing, China

Abstract

In order to obtain narrow linewidth semiconductor laser around 1564 nm, we design a distributed Bragg reflector (DBR) laser based on surface etched high-order Bragg gratings (SE-HOBGs). To achieve C-band Bragg resonance wavelength selection, the laser is designed as a grating period of 4.84 μm, an etched groove depth of 1.2 μm, a grating duty cycle of 69%, a total grating length of 72 μm, and a ridge waveguide width of 4.0 μm. For the DBR laser with cavity length of 1 mm, the output power reaches to 9.9 mW/facet and a 1564 nm laser output with a side mode suppression ratio (SMSR) more than 30 dB at an injection current of 80 mA. We measured and analyzed the phase/frequency noise, linewidth characteristics and the relative intensity noise (RIN) characteristics of the laser in detail. The lasers showed narrow Lorentz linewidth of 70 kHz. This paper provides a simple method for large-scale production of narrow linewidth semiconductor lasers.

Citation Download Citation

Chao Chen, Peng Jia, Li Qin, Yong-Yi Chen, Hong Chen, Yong-Qiang Ning, and Li-Jun Wang "Noise and linewidth characterizations of DBR laser based on surface etched high-order Bragg gratings", Proc. SPIE 11334, AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications, 113341C (18 December 2019); https://doi.org/10.1117/12.2548066

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