A photonic CMOS field effect transistor includes a built-in laser in the drain region, and multiple photon sensors in the well region. The MOSFET, laser, and photon sensors are fabricated as one integral transistor. When the MOSFET is on, the laser can also be turned on. When the MOSFET is off, the laser is off. The photonic CMOS can be a light emitting device. Traditional CMOS transistors are not. Various types of lasers may be fabricated in a photonic MOSFET: quantum well lasers, quantum dots lasers, tunnel LED, VCSEL, quantum cascade lasers. VF (laser diode forward voltage) = 0V has been reported with very low series resistance. There are advantages of using photonic CMOS to replace a laser diode used in the DPSSL: better thermal stability, higher power efficiency, improved capability for Q-Switching and Phase-Locking, and potentially better laser beam quality and lifetime. Nonlinear optical films can be integrated in the photonic CMOSFETs. Photonic CMOS pumped solid state laser (CPSSL) may replace DPSSL in the future.
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