Sub-nm depth characterization of EUV nanoscale photoresist films by standing-wave photoemission spectroscopy

G. Conti; H. P. Perin Martins; I. A. Cordova; J. Ma; R. J Wojtecki; P. Naulleau; S. Nemsak

doi:10.1117/12.2575463

10 November 2020 Sub-nm depth characterization of EUV nanoscale photoresist films by standing-wave photoemission spectroscopy

G. Conti, H. P. Perin Martins, I. A. Cordova, J. Ma, R. J Wojtecki, P. Naulleau, S. Nemsak

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Proceedings Volume 11517, Extreme Ultraviolet Lithography 2020; 115170I (2020) https://doi.org/10.1117/12.2575463
Event: SPIE Photomask Technology + EUV Lithography, 2020, Online Only

Abstract

The success in the shrinking of the electronic device constituents depends mostly on the photolithographic techniques. For next generation lithography, in order to achieve the desired downscaling patterns (<10 nm), extreme ultraviolet (EUV) radiation must be used and new materials must be developed. Standing Wave X-ray Photoelectron Spectroscopy (SWXPS), a fairly new method in the EUV lithography field, is an ideal method for characterization such new materials. For example, X-ray photoelectron spectroscopy (XPS) combined with standing-wave excitation can provide depth-selective information on the structural and chemical conditions of the photoresits as a function of temperature, exposure, or other parameters. We performed a SW-XPS feasibility study on self-assembled monolayer (SAM) films after exposure to electron beam. SW-XPS determined the semi-quantitative chemical profiles of the SAM layer with sub-nm accuracy including the roughness/interdiffusion of both interfaces. We demonstrated that SW-XPS can provide indispensable information useful for understanding the depth composition of films as well effects of irradiation (e-beam or EUV) on the latest ultrathin photoresists.

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G. Conti, H. P. Perin Martins, I. A. Cordova, J. Ma, R. J Wojtecki, P. Naulleau, and S. Nemsak "Sub-nm depth characterization of EUV nanoscale photoresist films by standing-wave photoemission spectroscopy", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 115170I (10 November 2020); https://doi.org/10.1117/12.2575463

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