Poster + Paper
20 September 2020 Analysis and mitigation of forbidden pitch effects for EUV lithography
Author Affiliations +
Conference Poster
Abstract
Features in forbidden pitch have limited exposure latitude and depth of focus in lithography exposure. This paper provides an analysis of forbidden pitch in extreme ultraviolet lithography (EUVL) from the perspective of rigorous simulation and source mask optimization (SMO). In the stage of rigorous simulation, S-litho is used to analyze the normalized image log slope (NILS) of test patterns from different critical layer in 5nm node. Then the process windows of these test patterns are simulated and compared by the lithography simulator Proteus WorkBench. From the result analysis, the forbidden pitches of critical layer in 5nm node are summarized. In addition, the strategy of mitigating the negative effect of forbidden pitch is proposed with the help of computational lithography.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ling Ma, Lisong Dong, Taian Fan, Xiaojing Su, Jianfang He, Ruixuan Wu, Yumei Zhou, and Yayi Wei "Analysis and mitigation of forbidden pitch effects for EUV lithography", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 115171B (20 September 2020); https://doi.org/10.1117/12.2573145
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Extreme ultraviolet lithography

Lithography

Nanoimprint lithography

Computational lithography

Source mask optimization

Deep ultraviolet

Manufacturing

Back to Top