Presentation + Paper
16 October 2020 Stochastic side-lobe printing in EUV lithography: a simulation study
Author Affiliations +
Abstract
EUV phase shifting masks may be introduced at the N3 node as alternative to double patterning or high-NA exposures. To be advantageous, phase shifting masks may have to come with phase different than 180° and high transmission. The main concern is how such exposures could be affected by stochastic side-lobe printing. In this paper, we present a simulation study where we compare stochastic distributions for contact layers with different mask approaches: binary mask, phase shifting mask with and without assist features, and TriTone masks. The purpose of this work is to evaluate whether phase shifting masks in EUV lithography may become a valuable option to further extend single exposure EUV at NA = 0.33.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anatoly Burov, Alessandro Vaglio Pret, Stewart A. Robertson, and Patrick Lee "Stochastic side-lobe printing in EUV lithography: a simulation study", Proc. SPIE 11518, Photomask Technology 2020, 115180Y (16 October 2020); https://doi.org/10.1117/12.2573261
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Extreme ultraviolet lithography

Photomasks

Stochastic processes

Printing

Binary data

Phase shifts

Critical dimension metrology

RELATED CONTENT

Extension of practical k1 limit in EUV lithography
Proceedings of SPIE (March 18 2016)
SAQP and EUV block patterning of BEOL metal layers on...
Proceedings of SPIE (March 24 2017)
EUVL alternating phase shift mask
Proceedings of SPIE (April 05 2011)
Patterning 0.1-um device by using hybrid PSM
Proceedings of SPIE (September 14 2001)
Lithographic alternatives to PSM repair
Proceedings of SPIE (June 01 1992)

Back to Top