In order to verify the performance about the surface of β-Ga2O3 as potocathode, we calculate some related properties, such as surface energy, band structure, density of states and absorption coefficient. The result is that the surface energy of β-Ga2O3 (0 1 0) is larger than β-Ga2O3 (1 0 0) surface, which is beneficial to the adsorption of cesium. The UV absorption efficiency of the β-Ga2O3 (0 1 0) surface meets the requirements of the photocathode This work can be used as a theoretical reference for UV-photocathodes.
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