Enhanced NiOx hole transport layer via graphene assisted annealing for perovskite solar cell

Zhong Hong; Zhujing Zhan; Xiyuan Liu; Hengda Qiu; Hang Zhou

doi:10.1117/12.2585347

4 December 2020 Enhanced NiO_x hole transport layer via graphene assisted annealing for perovskite solar cell

Zhong Hong, Zhujing Zhan, Xiyuan Liu, Hengda Qiu, Hang Zhou

Proceedings Volume 11617, International Conference on Optoelectronic and Microelectronic Technology and Application; 116172K (2020) https://doi.org/10.1117/12.2585347
Event: International Conference on Optoelectronic and Microelectronic Technology and Application, 2020, Nanjing, China

Abstract

Nonstoichiometric nickel oxide (NiO_x) hole transport layer (HTL) plays an important role in realizing high efficient and hysteresis-free perovskite solar cells (PSCs). Here, we report a precursor additive approach for forming high-quality solution processed NiO_x interlayer. A small quantity of reduced graphene oxide (rGO) is added to the conventional NiO_x precursor. It is found that the modified precursor lead to an improved hole extraction efficiency and uniformity of the NiO_x thin film. Statistically, compared to non-modified NiO_x precursor, perovskite solar cells based on NiO_x:rGO precursor have higher short-circuit current densities (Jsc) and higher fill factors (FF).

Citation Download Citation

Zhong Hong, Zhujing Zhan, Xiyuan Liu, Hengda Qiu, and Hang Zhou "Enhanced NiO_x hole transport layer via graphene assisted annealing for perovskite solar cell", Proc. SPIE 11617, International Conference on Optoelectronic and Microelectronic Technology and Application, 116172K (4 December 2020); https://doi.org/10.1117/12.2585347

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