PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Ultra-silicon-rich nitride devices possess large Kerr nonlinearity and absence of two-photon absorption at telecommunications wavelengths. We report recent results in high gain amplifiers and soliton-effects in USRN devices. On-chip optical parametric amplifiers with 42.5dB gain, and slow-light enhanced optical parametric amplifiers with 333dB/cm gain are demonstrated. Nonlinear USRN Bragg gratings are designed and demonstrated to possess three orders of magnitude larger group velocity dispersion compared to photonic waveguides. Time-resolved measurements reveal high-order Bragg soliton dynamics as well as observation of compression and fission triggered by large third-order dispersion. We further demonstrate close to ten-fold soliton-effect temporal compression in USRN waveguides.
Dawn T. H. Tan
"Applications of ultra-silicon-rich nitride devices for nonlinear integrated photonics", Proc. SPIE 11672, Laser Resonators, Microresonators, and Beam Control XXIII, 1167207 (5 March 2021); https://doi.org/10.1117/12.2577434
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Dawn T. H. Tan, "Applications of ultra-silicon-rich nitride devices for nonlinear integrated photonics," Proc. SPIE 11672, Laser Resonators, Microresonators, and Beam Control XXIII, 1167207 (5 March 2021); https://doi.org/10.1117/12.2577434