Presentation + Paper
5 March 2021 Applications of ultra-silicon-rich nitride devices for nonlinear integrated photonics
Dawn T. H. Tan
Author Affiliations +
Abstract
Ultra-silicon-rich nitride devices possess large Kerr nonlinearity and absence of two-photon absorption at telecommunications wavelengths. We report recent results in high gain amplifiers and soliton-effects in USRN devices. On-chip optical parametric amplifiers with 42.5dB gain, and slow-light enhanced optical parametric amplifiers with 333dB/cm gain are demonstrated. Nonlinear USRN Bragg gratings are designed and demonstrated to possess three orders of magnitude larger group velocity dispersion compared to photonic waveguides. Time-resolved measurements reveal high-order Bragg soliton dynamics as well as observation of compression and fission triggered by large third-order dispersion. We further demonstrate close to ten-fold soliton-effect temporal compression in USRN waveguides.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dawn T. H. Tan "Applications of ultra-silicon-rich nitride devices for nonlinear integrated photonics", Proc. SPIE 11672, Laser Resonators, Microresonators, and Beam Control XXIII, 1167207 (5 March 2021); https://doi.org/10.1117/12.2577434
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KEYWORDS
Integrated photonics

Dispersion

Solitons

Waveguides

System integration

Photonic crystals

Refractive index

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