Photoluminescence study of GaAs nanowires with and without AlGaAs Shell

Bowen Zhang; Xiaohua Wang; Jilong Tang; Zhipeng Wei

doi:10.1117/12.2592214

26 January 2021 Photoluminescence study of GaAs nanowires with and without AlGaAs Shell

Bowen Zhang, Xiaohua Wang, Jilong Tang, Zhipeng Wei

Proceedings Volume 11767, 2020 International Conference on Optoelectronic Materials and Devices; 117670B (2021) https://doi.org/10.1117/12.2592214
Event: 2020 International Conference on Optoelectronic Materials and Devices, 2020, Guangzhou, China

Abstract

Photoluminescence of GaAs nanowires with and without AlGaAs Shell were analyzed detailly through temperature- and power-dependent photoluminescence spectroscopy. AlGaAs shell effectively eliminated the surface dangling bonds and defects caused by oxidation of GaAs surface. And a model of sub-bandgap absorption based on inhomogeneities in GaAs bandgap were applied to analyzed the “high energy tail” of GaAs nanowires with AlGaAs shell.

Citation Download Citation

Bowen Zhang, Xiaohua Wang, Jilong Tang, and Zhipeng Wei "Photoluminescence study of GaAs nanowires with and without AlGaAs Shell", Proc. SPIE 11767, 2020 International Conference on Optoelectronic Materials and Devices, 117670B (26 January 2021); https://doi.org/10.1117/12.2592214

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