Optical Waveguiding In An Epitaxial Layer Of Silicon-Germanium Grown On Silicon

Richard A. Soref; Fereydoon Namavar; Joseph P. Lorenzo

doi:10.1117/12.963332

5 January 1990 Optical Waveguiding In An Epitaxial Layer Of Silicon-Germanium Grown On Silicon

Richard A. Soref, Fereydoon Namavar, Joseph P. Lorenzo

Proceedings Volume 1177, Integrated Optics and Optoelectronics; (1990) https://doi.org/10.1117/12.963332
Event: OE/FIBERS '89, 1989, Boston, United States

Abstract

Low-loss waveguiding at X = 1.3 µm has been observed in a partially strained, 10-µm thick, single-crystal layer of Ge0,1Si0.9 grown by chemical vapor deposition on a high-resistivity (100) silicon substrate. The TM-mode propagation loss in the multimode planar guide was less than 1.9 dB/cm. Device applications of GeSi waveguides are discussed.

Citation Download Citation

Richard A. Soref, Fereydoon Namavar, and Joseph P. Lorenzo "Optical Waveguiding In An Epitaxial Layer Of Silicon-Germanium Grown On Silicon", Proc. SPIE 1177, Integrated Optics and Optoelectronics, (5 January 1990); https://doi.org/10.1117/12.963332

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available