Investigation By Transmission Electron Microscopy Of The Al-SiO2 Thin-Film Reaction Induced By in-situ Rapid Thermal Processing

V. Baranauskas

doi:10.1117/12.963927

5 February 1990 Investigation By Transmission Electron Microscopy Of The Al-SiO₂ Thin-Film Reaction Induced By in-situ Rapid Thermal Processing

V. Baranauskas

Author Affiliations +

Proceedings Volume 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth; (1990) https://doi.org/10.1117/12.963927
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

Self-supporting bi-layer structures of Al/SiO2 thin-films has been investigated by a combination "in-situ" of Rapid Thermal Processing (RTP) and Transmission Electron Microscopy (TEM). We observed that the Al/Si02 mismatch results in high tensile stress that contribute to slower the kinectics of the Al nucleation. Practically there is no change of the Al morphology in the annealed samples even at temperatures up to 720 K. A metastable Al silicide was observed at temperatures around 370 K.

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V. Baranauskas "Investigation By Transmission Electron Microscopy Of The Al-SiO₂ Thin-Film Reaction Induced By in-situ Rapid Thermal Processing", Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); https://doi.org/10.1117/12.963927

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