Low Activation Energy Damage in Ion Bombarded YBa2Cu3O7-x Thin Films

I. S. Gergis; P. H. Kobrin; J. F. DeNatale; R. M. Housley

doi:10.1117/12.965168

19 March 1990 Low Activation Energy Damage in Ion Bombarded YBa₂Cu₃O_7-x Thin Films

I. S. Gergis, P. H. Kobrin, J. F. DeNatale, R. M. Housley

Proceedings Volume 1187, Processing of Films for High Tc Superconducting Electronics; (1990) https://doi.org/10.1117/12.965168
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

Investigation of the effects of ion bombardment and subsequent annealing of YBa2Cu3O7-x thin films indicates that a major part of the damage for low ion doses is associated with low activation energy processes. This conclusion is based on the partial recovery of the superconducting properties (TR.n and 3c) and the c-axis lattice parameter by annealing at temperatures as low as 300°C. The recovery can be substantial; in some cases superconduc-tivity reappeared in films where it had been completely lost and the c-parameter recovered more than half the increase that had occurred due to ion bombardment. This suggests that the likely damage mechanism at low doses is in the oxygen sublattice, such as the destruction of the long range order in the Cu-0 chains and generation of vacancies in the Cu-0 square planes. Almost full recovery of the 0+ implanted films occurs with 900°C annealing. However, in Si+ implanted films recovery occurs only up to 700-750°C followed by severe degradation of Tc and L for anneals at 900°C.

Citation Download Citation

I. S. Gergis, P. H. Kobrin, J. F. DeNatale, and R. M. Housley "Low Activation Energy Damage in Ion Bombarded YBa₂Cu₃O_7-x Thin Films", Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); https://doi.org/10.1117/12.965168

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