Paper
23 February 1990 An Excimer Laser-Based Aluminum Planarization Process
S. Chen, E. Ong
Author Affiliations +
Proceedings Volume 1190, Laser/Optical Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963994
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
An excimer laser-based system for planarization of aluminum alloys has been developed. The patented planarization process utilizes a 308 nm XeC1 laser to melt and reflow the aluminum film after metal deposition. Contacts and vias of submicron geometry are filled after laser melting without thermal degradation of the underlying structure. The effect of laser fluence on the planarization process as well as the effect of the contact pattern, contact profile and barrier metal to the planarization process are discussed. Insufficient laser energy causes grain boundary separation and metal cracking as a result of grain boundary scattering and preferential melting of Al at the grain boundary. A threshold energy of greater than 3.0 J/cm2 at a substrate temperature of 4000C is required to completely melt flow aluminum in the entire laser spot without grain boundary separation. Finally, a high throughput Al planarization process has been developed on the XMR Model 7100 planarization system.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Chen and E. Ong "An Excimer Laser-Based Aluminum Planarization Process", Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); https://doi.org/10.1117/12.963994
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KEYWORDS
Aluminum

Metals

Laser processing

Laser irradiation

Laser scattering

Semiconducting wafers

Laser damage threshold

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