Deep Level Defects In Ion Implanted Laser Annealed Bulk GaAs

Mqhele E. Dlodlo; Andrzej Rys; Akhter U. Ahmed; James H. Edgar

doi:10.1117/12.963978

23 February 1990 Deep Level Defects In Ion Implanted Laser Annealed Bulk GaAs

Mqhele E. Dlodlo, Andrzej Rys, Akhter U. Ahmed, James H. Edgar

Proceedings Volume 1190, Laser/Optical Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963978
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

In this paper, we report on the carrier activation and deep level crystal defects in pulsed excimer laser (A = 308 nm) anealed samples of GaAs implanted with Si and Se to a dose ranging from 2.2 x 1012 to 6.0 x 10" cm'. The residual defects in the pulsed-laser annealed GaAs have been investigated by means of photo-induced current transient spectroscopy (PITS). The electron concentration and carrier mobility were studied by Hall effect and Van der Pauw measurements. Although the implanted layer recrystallization was good and the sheet carrier concentration was high, the electron mobility was low. The correlation between deep traps, the carrier concentration, the electron mobility, and laser light intensity is presented.

Citation Download Citation

Mqhele E. Dlodlo, Andrzej Rys, Akhter U. Ahmed, and James H. Edgar "Deep Level Defects In Ion Implanted Laser Annealed Bulk GaAs", Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); https://doi.org/10.1117/12.963978

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