Excimer Laser-Assisted Deposition And Etching Of II-VI Materials

G. L. Olson; P. D. Brewer; J. J. Zinck; J. E. Jensen; L. W. Tutt

doi:10.1117/12.963972

23 February 1990 Excimer Laser-Assisted Deposition And Etching Of II-VI Materials

G. L. Olson, P. D. Brewer, J. J. Zinck, J. E. Jensen, L. W. Tutt

Proceedings Volume 1190, Laser/Optical Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963972
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

Results on laser-assisted deposition and surface modification of II-VI semiconductors and real-time optical diagnostics of laser-assisted reactions are reported. Excimer laser-assisted metal-organic vapor phase epitaxy has been used to deposit epitaxial layers of CdTe on GaAs(100) and HgTe and [HgCd]Te layers on CdTe/GaAs(100) at 165°C. KrF excimer laser radiation (248 nm) was used to photodissociate divinylmercury, dimethylcadmium and diethyltellurium source materials in the gas phase in a substrate-parallel irradiation geometry. Laser-induced fluorescence and multi-photon ionization spectroscopy was used to probe Te alkyl photodissociation dynamics. Single photon excitation at 248 nm results in the formation of ground state (5p3P2) Te atoms and alkyl photofragments. These results are consistent with a mechanism in which 248 nm excitation results in destabilization and cleavage of both Te-C bonds in the metal alkyl. Controllable surface layer removal and reproducible fluence-dependent composition changes were produced in CdTe thin films by KrF excimer laser irradiation. Time-of-flight mass spectrometric measurements of the velocity distribution of photoejected species are consistent with a thermal mechanism for the laser ablation process.

Citation Download Citation

G. L. Olson, P. D. Brewer, J. J. Zinck, J. E. Jensen, and L. W. Tutt "Excimer Laser-Assisted Deposition And Etching Of II-VI Materials", Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); https://doi.org/10.1117/12.963972

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