Mechanisms Of Contamination In Photochemical Deposition Or Thin Metal Films

K. A. Singmaster; F. A. Houle; R. J. Wilson

doi:10.1117/12.963989

23 February 1990 Mechanisms Of Contamination In Photochemical Deposition Or Thin Metal Films

K. A. Singmaster, F. A. Houle, R. J. Wilson

Proceedings Volume 1190, Laser/Optical Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963989
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

Systematic investigations of thin Cr, Mo and W films deposited from the hexacarbonyls with low power, cw UV light have been carried out in order to learn about sources of contamination by C and 0 (luring film growth. Dissociative chemisorption of CO from the precursor, reactions with oxygen-containing background gases during deposition and air alter deposition all affect film compositions. Laser heating can also he important. General aspects of film contamination are discussed for other precursors such as the alkyls and acetylacetonates, and compared to the present data.

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K. A. Singmaster, F. A. Houle, and R. J. Wilson "Mechanisms Of Contamination In Photochemical Deposition Or Thin Metal Films", Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); https://doi.org/10.1117/12.963989

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