Poster + Paper
25 May 2022 Continuous improvement of defectivity rate and CD uniformity in immersion lithography via track co-optimization method
Jorge P. Nacenta Mendivil, Nathalie Frolet, Karine Jullian, Michael May, Yuji Tanaka, Alexis Royer, Masahiko Harumoto, Raluca Tiron
Author Affiliations +
Conference Poster
Abstract
Continuous shrinking of semiconductor manufacturing node requires smaller critical dimension (CD) and higher pattern density, but also a better control of pattern local variability such as local CD uniformity (CDU). Thus, improving the process stability has been shown to improve local variability. Shrinking makes also crucial to control the process-specific patterned defectivity, with a more demanding defect detection and removal effort, which will depend on the mask level and stack materials. Therefore, integrating a new process in a recently installed immersion lithography cluster requires a thorough study of the influence of the track parameters in the specific process flow, as well as the use of last generation optical defectivity inspection, review and classification tools. In this work, we present the main results in the cooptimization of CD control, CD uniformity and after development inspection (ADI) of defectivity in a PTD immersion lithography process. The mask used is a gate layer targeting 42nm dense lines using a trilayer with topcoat lithographic stack.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jorge P. Nacenta Mendivil, Nathalie Frolet, Karine Jullian, Michael May, Yuji Tanaka, Alexis Royer, Masahiko Harumoto, and Raluca Tiron "Continuous improvement of defectivity rate and CD uniformity in immersion lithography via track co-optimization method", Proc. SPIE 12055, Advances in Patterning Materials and Processes XXXIX, 120550U (25 May 2022); https://doi.org/10.1117/12.2614237
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KEYWORDS
Semiconducting wafers

System on a chip

Critical dimension metrology

Scanning electron microscopy

Inspection

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