High operating temperature linear mode HgCdTe avalanche photodiodes for the extended SWIR

Pradip Mitra

doi:10.1117/12.2622345

30 May 2022 High operating temperature linear mode HgCdTe avalanche photodiodes for the extended SWIR

Pradip Mitra

Proceedings Volume 12107, Infrared Technology and Applications XLVIII; 121070C (2022) https://doi.org/10.1117/12.2622345
Event: SPIE Defense + Commercial Sensing, 2022, Orlando, Florida, United States

Abstract

We report new results on Linear Mode HgCdTe electron Avalanche Photodiodes (e-APDs) for applications in the 500 - 3000 nm band at 200-240K with high gain, low excess noise factor, low dark current density and high quantum efficiency. Results from two classes of devices will be reported: first the conventional HgCdTe e-APD grown by LPE with homogeneous composition and second bandgap engineered HgCdTe e-APDs grown by MBE. Detailed characterization data of the e-APDs including gain, dark current density and excess noise factor will be reported and compared with modeling results.

Conference Presentation

Citation Download Citation

Pradip Mitra "High operating temperature linear mode HgCdTe avalanche photodiodes for the extended SWIR", Proc. SPIE 12107, Infrared Technology and Applications XLVIII, 121070C (30 May 2022); https://doi.org/10.1117/12.2622345

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available