In this paper, we presented the technology of erbium-doped SiOx:TiOy films with different concentrations of erbium (0, 2, 4,6 wt.%) were fabricated using the sol-gel method and dip-coating technique. Tetraethyl orthosilicate (Si(OC2H5)4; TEOS) and titania (IV) ethoxide (Ti(OC2H5)4; TET) were used as precursors of silica, and titania, respectively. Erbium(III) nitrate pentahydrate (Er(NO3)3·5H2O) were used as doping sources of Er ions. The influence of erbium concentration on the optical properties were analyzed using monochromatic elipsometry and UV-Vis spectrophotometry. Using the reflectance spectrophotometry method, optical homogeneity of erbium-doped SiOx:TiOy films were confirmed. The optical band gaps (Eg) were estimated from UV-Vis spectrophotometry. The results indicates to slight decrease in crystallite size of erbium-doped SiOx:TiOy films with increasing erbium concentration. Photoluminescence properties in visible region of erbium-doped SiOx:TiOy films have been demonstrated.
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