Threshold current density dependence on p-doping in AlGaInP laser

Toshitaka Aoyagi; T. Kimura; Naoto Yoshida; Tomoko Kadowaki; Takashi Murakami; Nobuaki Kaneno; Yoshito Seiwa; Kazuo Mizuguchi; Wataru Susaki

doi:10.1117/12.18295

1 May 1990 Threshold current density dependence on p-doping in AlGaInP laser

Toshitaka Aoyagi, T. Kimura, Naoto Yoshida, Tomoko Kadowaki, Takashi Murakami, Nobuaki Kaneno, Yoshito Seiwa, Kazuo Mizuguchi, Wataru Susaki

Author Affiliations +

Proceedings Volume 1219, Laser Diode Technology and Applications II; (1990) https://doi.org/10.1117/12.18295
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

Minimum threshold current density (Jth) less than 2.OkA/cm2 is obtained at optimum hole concentration in the Zn-doped cladding layer (NH) of 3"4x 1O'7ca3 in the AlGaInP laser diodes. At NM lower than optimum one, Jth increases gradually due to poor electron confinement in the active layer. At NH higher than optimum one, Jth also increases due to Zn diffusion from the Zn-doped cladding layer to the active layer during epitaxial growth. One of the reasons is that Zn atoms act as nonradiative recombination centers in the active layer. By optimizing NH in the index guide AlGaInP laser diodes with 6u a width stripe, threshold current of 4OmA and astigmatism smaller than 8 m are achieved.

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Toshitaka Aoyagi, T. Kimura, Naoto Yoshida, Tomoko Kadowaki, Takashi Murakami, Nobuaki Kaneno, Yoshito Seiwa, Kazuo Mizuguchi, and Wataru Susaki "Threshold current density dependence on p-doping in AlGaInP laser", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); https://doi.org/10.1117/12.18295

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