PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
We have been studying fast low noise CCDs with a readout circuit based on pJFET transistors developed by MIT Lincoln Laboratory as a candidate technology for X-ray detectors for future strategic missions. We have already achieved significant progress, running the serial register of the device at a frequency of 2 MHz with readout noise of 2.6 electrons rms. Accurate measurements of responsivity produced a value of 60 microV/electron, very high for a CCD. By exploring the temperature dependencies of readout noise we found substantial improvement of noise at lower temperatures, with resonant-like features at medium temperatures. We attribute those resonant features to bulk traps with discrete energy levels inside transistor channel. We studied noise power spectra at different operating voltages and device temperatures and present results of such measurements with the goal of further optimizing noise and readout frequency of the sensor.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
G. Prigozhin, M. Cooper, K. Donlon, C. Leitz, B. LaMarr, A. Malonis, R. Foster, S. Herrmann, M. Bautz, "Latest results for a fast low noise CCD readout based on pJFET," Proc. SPIE 12191, X-Ray, Optical, and Infrared Detectors for Astronomy X, 121911D (29 August 2022); https://doi.org/10.1117/12.2630166