Poster + Paper
1 December 2022 The measurement of the refractive index n and k value of the EUV resist which used EUV reflectivity measurement method
A. Sekiguchi, Y. Ohta D.D.S., T. Harada, T. Watanabe D.D.S.
Author Affiliations +
Conference Poster
Abstract
Our previous studies focused on ways to measure simulation parameters for EUV resists, including development parameters, Dill's C parameter, the diffusion length of PAG-derived acids, and parameters for deprotection reactions. Through EUV resist simulations based on these parameters, we examined conditions for reducing LER and improving resolution. This paper presents the results of our investigations of methods for determining the refractive index n and extinction coefficient k of photoresists for EUV light (wavelength 13.5 nm), parameters generally considered difficult to measure, and for calculating an absorption parameter known as the Dill's B parameter. We investigated three types of photoresists: polymer decomposition type resist, chemically amplified resist, and EUV metal resist.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Sekiguchi, Y. Ohta D.D.S., T. Harada, and T. Watanabe D.D.S. "The measurement of the refractive index n and k value of the EUV resist which used EUV reflectivity measurement method", Proc. SPIE 12292, International Conference on Extreme Ultraviolet Lithography 2022, 122920U (1 December 2022); https://doi.org/10.1117/12.2644821
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KEYWORDS
Absorption

Extreme ultraviolet lithography

Photoresist materials

Polymers

Reflection

Synchrotron radiation

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