Presentation + Paper
16 March 2023 Physical and electrical characterization of a silicon suboxide seed layer
Seref Kalem
Author Affiliations +
Proceedings Volume 12422, Oxide-based Materials and Devices XIV; 124220J (2023) https://doi.org/10.1117/12.2662575
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
The silicon suboxide SiOx (x<2.0) offers promising application possibilities ranging from electrodes in lithium-ion batteries used widely in electrical vehicles and portable devices to sensing applications. Therefore, a low cost, environmental friendly and high performance oxide materials are required for an appropriate operation of any electronic gadget. In this work, we report on the physical and electrical properties of a suboxide formed as a seed layer during the formation of a dielectric layer, namely the ammonium silicon hexafluoride. The measurement results reveal interesting properties, which are required to be understood clearly before any application. The results have been analyzed using state-of-the-art techniques and compared with the developments of SiOx obtained by related techniques. In this presentation, a comprehensive review of the physical and electrical properties is given in order to clarify the origin of the observed features. At the end of the paper, a lookout is provided for the possible applications of this special SiOx dielectric seed layer.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seref Kalem "Physical and electrical characterization of a silicon suboxide seed layer", Proc. SPIE 12422, Oxide-based Materials and Devices XIV, 124220J (16 March 2023); https://doi.org/10.1117/12.2662575
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KEYWORDS
Silicon

Picosecond phenomena

Semiconducting wafers

Photoluminescence

Quantum switching

Vibration

Oxides

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