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30 April 2023 Process signature correction through film thickness modification of a spin-on glass film
Jodi Grzeskowiak, Michael Murphy, Daniel Fulford, David Conklin
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Proceedings Volume 12498, Advances in Patterning Materials and Processes XL; 1249808 (2023) https://doi.org/10.1117/12.2657589
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States
Abstract
In semiconductor manufacturing, thousands of process steps are required to produce an integrated circuit (IC) chip; each with a uniformity signature that impacts yield. Typically, non-uniformities can be minimized by tuning process conditions. However, even after extensive process optimization, there’s often a residual signature that needs to be removed. The Z-Height chemistry and hardware set applies a spatial correction aimed at removing these residuals and improving planarity. The pitch doubled self-aligned block (SAB) approach of patterning sub-resolution metal lines is one such integration that benefits from this correction method by improving the block height uniformity to ensure proper pattern transfer and a wider process window. In this paper, we will discuss the approach to correct for the thickness non-uniformities induced by the spin-coating and etch processes of a spin-on glass film. Initial results show a 36% improvement in film thickness variation.
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Jodi Grzeskowiak, Michael Murphy, Daniel Fulford, and David Conklin "Process signature correction through film thickness modification of a spin-on glass film", Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 1249808 (30 April 2023); https://doi.org/10.1117/12.2657589
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KEYWORDS
Glasses
Semiconducting wafers
Chemistry
Double patterning technology
Etching
Integrated circuits
Laser systems engineering
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