0.5-um optical mask process for 364-nm scanned laser lithography

Peter D. Buck

doi:10.1117/12.20186

1 June 1990 0.5-μm optical mask process for 364-nm scanned laser lithography

Peter D. Buck

Proceedings Volume 1264, Optical/Laser Microlithography III; (1990) https://doi.org/10.1117/12.20186
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

The implementation of a 0. 60 NA 20X objective lens in a new high resolution mask lithography tool utilizing 364 nm scanned laser lithography provides the opportunity to investigate an optical alternative to e-beam lithography for mask manufacturing with minimum line widths of 0. 5 micrometer. The near i-line illumination of this system allows the use of commercially available i-line resists developed for i-line wafer steppers. A number of these i-line resists are evaluated for use in 364 nm scanned laser mask lithography. The characteristics of routine one-step dry-to-dry processing for masks with 0. 5 micrometer minimum line widths are shown including exposure focus and development latitude. Several wet etchants are evaluated for use with 0. 5 micrometer mask processing. The consequences of zero bias (tape CD to mask CD) processing and the resolution limitations of wet etching for masks are discussed.

Citation Download Citation

Peter D. Buck "0.5-μm optical mask process for 364-nm scanned laser lithography", Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); https://doi.org/10.1117/12.20186

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