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2 May 2023 Influence of different channel crystal orientation on performance of 4H-SiC MOSFET
JiaLin Liu, YingKun Liu, YongLiang Tan, JiaJia Liu, Wang Feng
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Proceedings Volume 12642, Second International Conference on Electronic Information Engineering, Big Data, and Computer Technology (EIBDCT 2023); 126420A (2023) https://doi.org/10.1117/12.2674766
Event: Second International Conference on Electronic Information Engineering, Big Data and Computer Technology (EIBDCT 2023), 2023, Xishuangbanna, China
Abstract
In this paper, the SiC MOSFETs with different channel crystal orientation are all fabricated on the 6-inch (0001) 4H-SiC wafer. Preliminary measurements demonstrate that the fabricated 4H-SiC trench MOSFET with <11-20< channel crystal orientation has the highest carrier mobility and the strongest current capability of unit gate width. This high carrier mobility is consistent with the lowest interface state density. Finally, an enhanced 4H-SiC trench MOSEFT with breakdown voltage of 900V, specific on-resistance of 0.8 mΩ·cm2 and threshold voltage of 4.2V was prepared based on the channel crystal orientation of <11-20<.
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JiaLin Liu, YingKun Liu, YongLiang Tan, JiaJia Liu, and Wang Feng "Influence of different channel crystal orientation on performance of 4H-SiC MOSFET", Proc. SPIE 12642, Second International Conference on Electronic Information Engineering, Big Data, and Computer Technology (EIBDCT 2023), 126420A (2 May 2023); https://doi.org/10.1117/12.2674766
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KEYWORDS
Silicon carbide
Field effect transistors
Interfaces
Annealing
Semiconducting wafers
Semiconductor materials
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