Fabrication of InGaAs/InP single-photon avalanche diodes for SWIR active imaging

F. Rutz; A. Wörl; A. Bächle; J. Niemasz; R. Rehm

doi:10.1117/12.2675617

17 October 2023 Fabrication of InGaAs/InP single-photon avalanche diodes for SWIR active imaging

F. Rutz, A. Wörl, A. Bächle, J. Niemasz, R. Rehm

Proceedings Volume 12740, Emerging Imaging and Sensing Technologies for Security and Defence VIII; 127400C (2023) https://doi.org/10.1117/12.2675617
Event: SPIE Security + Defence, 2023, Amsterdam, Netherlands

Abstract

Imaging LiDAR (light detection and ranging) systems for sensing the surrounding environment are a key component for, e.g., reconnaissance and autonomous navigation. The physical basis of LiDAR systems is the time-of-flight measurement of the backscattered intensity of a pulsed laser beam. For a sufficiently high detection efficiency, the highest possible sensitivity of the photodetector is required as provided by the single-photon avalanche diode (SPAD). The maximum detection range can be even further extended by the usage of laser sources for the short-wavelength infrared (SWIR) spectral range with typical wavelengths around 1550 nm, allowing for increased optical intensities to be emitted. The InGaAs/InP material system is ideally suited for SPADs for the SWIR spectral range. The fabrication of InGaAs/InP SPADs into focal plane arrays as core component for future imaging lidar systems with a high spatial resolution are quite demanding. The key technology for the fabrication of InGaAs/InP SPADs is the planar process technology via zinc diffusion to produce spatially confined p-type regions. For the zinc-diffusion process, a novel method of selective epitaxial overgrowth was developed, achieving the intended double-diffusion profile. First experimental data of thus fabricated InGaAs/InP avalanche photodiodes show the expected dark-current, photo-current, and multiplication-gain characteristics in linear-mode operating, as well as breakthrough behavior in Geiger-mode operation at typical operating temperatures around 220 to 240 K, which are achievable by thermoelectric cooling.

Conference Presentation

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

F. Rutz, A. Wörl, A. Bächle, J. Niemasz, and R. Rehm "Fabrication of InGaAs/InP single-photon avalanche diodes for SWIR active imaging", Proc. SPIE 12740, Emerging Imaging and Sensing Technologies for Security and Defence VIII, 127400C (17 October 2023); https://doi.org/10.1117/12.2675617

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available