Paper
1 October 1990 High-power laser float-zone crystal growth
A. Cohen, Uwe Brauch, J. Muckenschnabel, Hans Opower
Author Affiliations +
Proceedings Volume 1276, CO2 Lasers and Applications II; (1990) https://doi.org/10.1117/12.20556
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
Abstract
A float zone crystal growth apparatus was developed. The heat source was a 3.5 kW CO2 Trumpf laser with a long term stability of 2 %. The original laser beam was divided, in the beam delivery system, into three equivalent focusable beams. The vacuum vessel is equipped with two equivalent rotation - translation systems with a maximum translational speed of 1 mm/minute. The vessel is also pierced with five windows, three of which serve the three incoming beams, one for observation with a television camera, one for an optical pyrometer or for direct observation. The three beam windows are protected by a laminar gas curtain. A heat shield system with an after heater is planned, in order to enable growth of high temperature oxides. The system was tested in the growth of small sapphire crystals (0 4 mm) and in the growth of silicon whose dimensions were 0 10 mm x 70 mm. * On leave from the Weizmann Institute, Rehovot, Israel
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Cohen, Uwe Brauch, J. Muckenschnabel, and Hans Opower "High-power laser float-zone crystal growth", Proc. SPIE 1276, CO2 Lasers and Applications II, (1 October 1990); https://doi.org/10.1117/12.20556
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KEYWORDS
Crystals

Carbon dioxide lasers

Laser crystals

Beam delivery

Oxides

Silicon

High power lasers

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