Paper
28 November 2023 Nonvolatile electrically reconfigurable silicon photonics enabled by back-end-of-line integration of phase change materials
Author Affiliations +
Abstract
Nonvolatile light-field manipulation via electrically-driven phase transition of chalcogenide phase change materials (PCMs) is regarded as one of the most powerful solutions to low-power-consumption and compact integrated reconfigurable photonics. However, before the breakthrough in large-scale integration approaches linked to wafer foundries, phase-change non-volatile reconfigurable photonics could hardly see their widespread practical applications. Here we demonstrate nonvolatile photonic devices fabricated by back-end-of-line (BOEL) integration of PCMs into the commercial silicon photonics platform. A narrow trench etched into the BOEL dielectric layer exposed the waveguide core and allowed for the direct deposition of various PCM films on the waveguide in the functional areas. Fine-tuning the nonvolatile phase transition of Sb2Se3 via a PIN microheater was verified by realizing the post-fabrication trimming of silicon photonic devices. Our work highlights a reliable platform for large-scale PCM-integrated photonics and validates its precise nonvolatile reconfigurability.
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Junying Li, Maoliang Wei, Kai Xu, Bo Tang, Yiting Yun, Peng Zhang, Yingchun Wu, Kangjian Bao, Kunhao Lei, Zequn Chen, Hui Ma, Chunlei Sun, Ruonan Liu, Ming Li, Lan Li, and Hongtao Lin "Nonvolatile electrically reconfigurable silicon photonics enabled by back-end-of-line integration of phase change materials", Proc. SPIE 12764, Optoelectronic Devices and Integration XII, 127640D (28 November 2023); https://doi.org/10.1117/12.2687022
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KEYWORDS
Silicon photonics

Fabrication

Photonics

Waveguides

Back end of line

Antimony

Silicon

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