Investigation of multiphoton photocurrent in SiC using phase-modulated femtosecond laser pulses

Ahsan Ali; Chuanliang Wang; Jinyang Cai; Khadga Jung Karki

doi:10.1117/12.2688642

26 November 2023 Investigation of multiphoton photocurrent in SiC using phase-modulated femtosecond laser pulses

Ahsan Ali, Chuanliang Wang, Jinyang Cai, Khadga Jung Karki

Proceedings Volume 12775, Quantum and Nonlinear Optics X; 1277512 (2023) https://doi.org/10.1117/12.2688642
Event: SPIE/COS Photonics Asia, 2023, Beijing, China

Abstract

Wide bandgap semiconductors are widely used in photonic technologies due to their important features, such as large optical windows, fewer energy losses, and fast operational capacity. Next-generation devices require extensive investigation to achieve the desired stability and scalability. Silicon carbide (SiC) is a wide bandgap semiconductor with high optical nonlinearities, large electron transport, and a high breakdown threshold. Integration of SiC in nonlinear photonics requires a systematic analysis of the multiphoton contribution to the device functionality. Here, multiphoton absorption in SiC photodetector is investigated using phase-modulated femtosecond pulses. Quantification of multiphoton absorption is achieved by using a 1030nm phase-modulated pulsed laser. Our measurements show that although the bandgap is less than the energy of three photons combined, four-photon absorption (4PA) contributes to the photocurrent. We interpret 4PA as a phonon-assisted indirect transition from the valance band Γ point to the L point in the conduction band. Moreover, it is found that SiC withstands high excitation intensities, which is suitable for high-power applications.

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Ahsan Ali, Chuanliang Wang, Jinyang Cai, and Khadga Jung Karki "Investigation of multiphoton photocurrent in SiC using phase-modulated femtosecond laser pulses", Proc. SPIE 12775, Quantum and Nonlinear Optics X, 1277512 (26 November 2023); https://doi.org/10.1117/12.2688642

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KEYWORDS

Silicon carbide

Photocurrent

Femtosecond phenomena

Modulation frequency

Photons

Light absorption

Photodetectors

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