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Quantum dot intermediate band solar cells involve nanoscale and microscale physical mechanisms that ultimately decide the operation of the cell in the intermediate band or single gap regime and must be considered for a proper description of the device behavior. In this work we discuss material- and device-level guidelines aimed at demonstrating truly intermediate band operation of quantum dot solar cells with the aid of numerical simulations built upon a hybrid modeling approach. Semiclassical transport is coupled with charge carrier transfer mechanisms involving localized states, allowing to merge the nanoscale and microscale pictures at a computational cost compatible with the simulation of a real solar cell structure.
F. Cappelluti
"Simulating quantum dot intermediate band solar cells by enhanced semiclassical model", Proc. SPIE 12881, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XIII, 1288105 (8 March 2024); https://doi.org/10.1117/12.3003723
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F. Cappelluti, "Simulating quantum dot intermediate band solar cells by enhanced semiclassical model," Proc. SPIE 12881, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XIII, 1288105 (8 March 2024); https://doi.org/10.1117/12.3003723